參數(shù)資料
型號(hào)： MRF21030
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF Power MOSFETs(RF功率MOS場效應(yīng)管)
中文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE 465E-03, 3 PIN
文件頁數(shù)： 4/8頁
文件大小： 147K
代理商： MRF21030
MRF21030 MRF21030S
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
VDD = 28 V, IDQ = 250 mA, Pout = 30 Watts (PEP)
Two–Tone Measurement, 100 kHz Tone Spacing
η
IRL
IMD
Gps
,
η
Gp
A
Figure 3. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
0
2080
2120
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
Pout, OUTPUT POWER (WATTS Avg.) CDMA
30
20
2100
2180
2
–35
Figure 5. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
–55
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
1.0
1.0
15
16
60
–45
–35
–15
–30
10
20
10
14
2140
2160
4
5
100
10
1.0
13
2200
100
30
40
–5
–25
–20
10
3rd Order
5th Order
–25
–50
–40
–30
–20
–50
–70
–60
–40
–30
I
I
,
η
Gp
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
VDD, DRAIN VOLTAGE (VOLTS)
34
24
–30
–22
I
28
20
–34
–38
–26
15
25
–70
–30
–50
–20
–40
–60
6
VDD = 28 V, IDQ = 250 mA, f = 2140 MHz,
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
I
10
200 mA
250 mA
400 mA
VDD = 28 V, f = 2140 MHz
Two–Tone Measurement,
100 kHz Tone Spacing
I
VDD = 28 V, IDQ = 250 mA, f = 2140 MHz
Two–Tone Measurement,
100 kHz Tone Spacing
Gp
VDD = 28 V, f = 2140 MHz
Two–Tone Measurement, 100 kHz Tone Spacing
Gp
13
13.5
15
14.5
14
26
30
f = 2140 MHz
IDQ = 250 mA, Pout = 30 Watts (PEP)
Two–Tone Measurement, 100 kHz Tone Spacing
η
Gps
Gps
IMD
0
1
3
350 mA
300 mA
200 mA
250 mA
400 mA
350 mA
300 mA
22
32
7th Order
50
–10
ACPR
–32
–24
–36
–28
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF21030D 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
MRF21030LR3 功能描述:射頻MOSFET電源晶體管 30W 2.2GHZ LDMOS NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF21030LR5 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF21030LSR3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21030R3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
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