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參數(shù)資料
| 型號： | MRF21030 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 465E-03, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 147K |
| 代理商： | MRF21030 |
MRF21030 MRF21030S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20
μ
A)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100
μ
Adc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 250 mA)
VGS(Q)
2
3.3
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Coss
—
37
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.3
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
—
13
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
η
—
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD
—
–30
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL
—
–13
—
dB
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
12
13
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
31
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
–30
–27.5
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
–13
–9
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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|---|---|
| MRF21030D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| MRF21030LR3 | 功能描述:射頻MOSFET電源晶體管 30W 2.2GHZ LDMOS NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRF21030LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21030R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
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