參數(shù)資料
型號: MRF20030
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF POWER TRANSISTOR
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 5/10頁
文件大?。?/td> 111K
代理商: MRF20030
5
MRF20030
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
G
Figure 3. Output Power & Power Gain
versus Input Power
30
Pin, INPUT POWER (WATTS)
5
0
2
10
20
15
Figure 4. Output Power versus Frequency
0
1800
1850
f, FREQUENCY (MHz)
40
20
5
1
3
5
30
P
2000
0
P
25
11
10
9
8
G
1900
1950
Figure 5. Intermodulation Distortion
versus Output Power
– 20
Pout, OUTPUT POWER (WATTS) PEP
– 70
20
Figure 6. Power Gain and Intermodulation
Distortion versus Supply Voltage
10.5
VCC, COLLECTOR SUPPLY VOLTAGE (Vdc)
9
10
30
40
8
I
Figure 7. Intermodulation Distortion
versus Output Power
0.01
Pout, OUTPUT POWER (WATTS) PEP
– 45
– 60
10
– 35
Figure 8. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
5
0.01
1.0
10
10
1.0
100
100
0
6
7
8
9.5
8.5
7.5
20
22
18
– 50
– 40
– 25
I
–45
28
–35
I
VCC = 26 Vdc
ICQ = 125 mA
f = 2000 MHz Single Tone
35
24
26
12
11.5
–25
–20
–15
–10
–5
– 60
– 50
– 40
– 30
10
25
15
Pout = 30 W (PEP)
ICQ = 125 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
IMD
Gpe
Pout
3rd Order
7th Order
5th Order
Pin = 3.5 W
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
250 mA
125 mA
ICQ = 75 mA
VCC = 26 Vdc
ICQ = 125 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
4
– 55
15
5
25
35
75 mA
250 mA
125 mA
11.5
10.5
9.5
8.5
1.5 W
35
2.5 W
10
11
Gpe
–40
–30
– 30
11
9
ICQ = 400 mA
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
0.1
0.1
400 mA
VCC = 26 Vdc
ICQ = 125 mA
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