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參數(shù)資料
| 型號(hào)： | MRF18085BR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF power field effect transistors |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 610K |
| 代理商： | MRF18085BR3 |
MRF18085BR3 MRF18085BLSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μ
Adc)
V
GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 600 mAdc)
V
GS(Q)
2.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
—
0.18
0.21
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
6.0
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
3.6
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ 85 W
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1930 - 1990 MHz)
G
ps
11.5
12.5
—
dB
Drain Efficiency @ 85 W
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1930 - 1990 MHz)
η
46
50
—
%
Input Return Loss @ 85 W
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1930 - 1990 MHz)
IRL
—
-12
-9
dB
P1 dB Output Power
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1930 - 1990 MHz)
P1dB
80
90
—
Watts
Output Mismatch Stress @ P1dB
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 1930 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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