參數(shù)資料
型號: MRF18030ALR3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: CHOPPER STABILIZED LATCH W/TIN PLATING
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-400, CASE 465E-04, 2 PIN
文件頁數(shù): 2/8頁
文件大小: 508K
代理商: MRF18030ALR3
MRF18030ALR3 MRF18030ALSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
μ
Adc)
V
(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μ
Adc)
V
GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 250 mAdc)
V
GS(Q)
2
3.9
4.5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
0.29
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1 Adc)
g
fs
2
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
1.3
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture) (2)
Output Power, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1805 - 1880 MHz)
P1dB
27
30
Watts
Common-Source Amplifier Power Gain @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1805 - 1880 MHz)
G
ps
13
14
dB
Drain Efficiency @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1805 - 1880 MHz)
η
46.5
50
%
Input Return Loss @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1805 - 1880 MHz)
IRL
-12
-9
dB
Output Mismatch Stress @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f1 = 1805 - 1880 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) Device specifications obtained on a Production Test Fixture.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關(guān)PDF資料
PDF描述
MRF18030ALSR3 SEE A3282EUA-T
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MRF18060BLSR3 HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF18030ALSR3 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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MRF18030BLR3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18030BLSR3 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
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