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參數(shù)資料
| 型號(hào)： | MRF171A |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF MOSFET(射頻MOS場(chǎng)效應(yīng)管) |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-07, 4 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 283K |
| 代理商： | MRF171A |
MRF171A
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued
(T
C
= 25
°
C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 50 mA)
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 3 A)
Forward Transconductance
(V
DS
= 10 V, I
D
= 2 A)
Symbol
Min
Typ
Max
Unit
V
GS(th)
1.5
2.5
4.5
Vdc
V
DS(on)
—
1.0
—
V
g
fs
1.4
1.8
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
C
iss
—
60
—
pF
C
oss
—
70
—
pF
C
rss
—
8
—
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(V
DD
= 28 V, P
out
= 45 W, f = 150 MHz, I
DQ
= 25 mA)
Drain Efficiency
(V
DD
= 28 V, Pout = 45 W, f = 150 MHz, I
DQ
= 25 mA)
Electrical Ruggedness
(V
DD
= 28 V, P
out
= 45 W, f = 150 MHz, I
DQ
= 25 mA,
VSWR 30:1 at All Phase Angles)
G
ps
17
19.5
—
dB
η
60
70
—
%
No Degradation in Output Power
TYPICAL FUNCTIONAL TESTS (SSB)
Common Source Power Gain
(V
DD
= 28 V, P
out
= 30 W (PEP), I
DQ
= 100 mA,
f = 30; 30.001 MHz)
G
ps
—
20
—
dB
Drain Efficiency
(V
DD
= 28 V, P
out
= 30 W (PEP), I
DQ
= 100 mA,
f = 30; 30.001 MHz)
η
—
50
—
%
Intermodulation Distortion
(V
DD
= 28 V, P
out
= 30 W (PEP), I
DQ
= 100 mA,
f = 30; 30.001 MHz)
IMD(d3)
—
–32
—
dB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF171AMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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