參數(shù)資料
型號(hào): MRF1535FNT1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA
封裝: ROHS COMPLIANT, PLASTIC, CASE 1264A-03, 6 PIN
文件頁數(shù): 3/19頁
文件大?。?/td> 658K
代理商: MRF1535FNT1
MRF1535NT1 MRF1535FNT1
11
RF Device Data
Freescale Semiconductor
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large -signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two - port stability analysis with this device’s
S-parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, “RF Small-Signal Design
Using Two-Port Parameters” for a discussion of two port
network theory and stability.
相關(guān)PDF資料
PDF描述
MRF1535NT1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
MRF1535T1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
MRF1550FNT1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA
MRF1550NT1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
MRF1550FT1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
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參數(shù)描述
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