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參數(shù)資料
| 型號(hào)： | MRF1513T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, PLD-1.5, CASE 466-02, 4 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 494K |
| 代理商： | MRF1513T1 |
MRF1513T1
5–82
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
The MRF1513T1 is designed for broadband commercial and industrial
applications with frequencies to 520 MHz. The high gain and broadband
performance of this device make it ideal for large–signal, common source
amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 3 Watts
Power Gain — 11 dB
Efficiency — 55%
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
40
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
2
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25
°C
PD
31.25
0.25
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
4
°C/W
(1) Calculated based on the formula PD =
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF1513T1
520 MHz, 3 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
PLD–1.5
PLASTIC
G
D
S
TJ– TC
R
θJC
REV 4
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