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參數(shù)資料
| 型號： | MRF1511NT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 230K |
| 代理商： | MRF1511NT1 |
MRF1511NT1 MRF1511T1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N
Channel Enhancement
Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies to 175 MHz. The high gain and broadband performance of this device
makes it ideal for large
signal, common source amplifier applications in 7.5 volt
portable FM equipment.
Specified Performance @ 175 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11.5 dB
Efficiency — 55%
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal
Impedance Parameters
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
RF Power Plastic Surface Mount Package
N Suffix Indicates Lead
Free Terminations
Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
0.5, +40
Vdc
Gate
Source Voltage
V
GS
±
20
Vdc
Drain Current — Continuous
I
D
4
Adc
Total Device Dissipation @ T
C
= 25
°
C
(1)
Derate above 25
°
C
P
D
62.5
0.5
W
W/
°
C
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2
°
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22
A113, IPC/JEDEC J
STD
020
1
260
°
C
1. Calculated based on the formula P
D
=
NOTE
CAUTION
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF1511
Rev. 3, 3/2005
Freescale Semiconductor
Technical Data
MRF1511NT1
MRF1511T1
175 MHz, 8 W, 7.5 V
LATERAL N
CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466
03, STYLE 1
PLD
1.5
PLASTIC
TJ –TC
R
θ
JC
Freescale Semiconductor, Inc., 2005. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1511NT1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511T1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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