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參數(shù)資料
| 型號： | MRD6S18060MR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁數(shù)： | 7/20頁 |
| 文件大?。?/td> | 694K |
| 代理商： | MRD6S18060MR1 |
A
A
MRF6S18060MR1 MRF6S18060MBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
—
1900 MHz
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
Figure 8. Error Vector Magnitude versus
Frequency
100
10
17
1
0
70
V
DD
= 26 Vdc
I
DQ
= 600 mA
f = 1960 MHz
T
C
= 30 C
30 C
25 C
85 C
10
16
15
14
13
12
11
60
50
40
30
20
10
P
out
, OUTPUT POWER (WATTS) CW
Figure 9. Error Vector Magnitude and Drain
Efficiency versus Output Power
55
60
65
70
75
1920
80
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
f, FREQUENCY (MHz)
P
out
= 35 W Avg.
25 W Avg.
10 W Avg.
V
DD
= 26 Vdc
I
DQ
= 450 mA
P
out
, OUTPUT POWER (WATTS) AVG.
100
4
12
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1960 MHz
8
6
0
10
1
2
20
60
40
30
0
10
T
C
= 30 C, 25 C
85 C
G
ps
T
C
= 30 C
25 C
85 C
75
45
0
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
50
55
60
65
70
10
η
D
,
η
D
η
D
,
η
D
G
p
,
E
2020
1
4
1900
3
2.5
1.5
1980
1960
1940
1920
3.5
2
E
S
S
25 C
85 C
2000
10
50
EVM
30 C
25 C
85 C
1940
1960
1980
2000
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1960 MHz
P
out
= 35 W Avg.
25 W Avg.
10 W Avg.
35 W Avg.
25 W Avg.
10 W Avg.
f, FREQUENCY (MHz)
20
30
40
50
60
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1960 MHz
T
C
= 85 C
25 C
30 C
85
55
0
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
60
70
75
80
10
S
20
30
40
50
60
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1960 MHz
65
SR 400 kHz
SR 600 kHz
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