參數(shù)資料
型號(hào)： VS46417801BTG-10
廠商： VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
封裝： DIMM-168
文件頁(yè)數(shù)： 15/30頁(yè)
文件大小： 295K
代理商： VS46417801BTG-10
Document:1G5-0134
Rev.2
Page 7
VIS
VS26417801B,VS46417801B
2M,4MX64-Bit
SDRAM Module
DC Characteristics(Recommended Operating Conditions unless otherwise noted)
Notes 1. ICC depends on output loading and cycle rates. Specified values are obtained with the output open.
2. ICC is measured on condition that addresses are changed only one time during tCK(MIN.).
Parameter
Symbol
Test Conditions
VS26417801B
-8H
-8L
-10
Unit Notes
Min Max Min Max Min Max
Operating current
ICC1
Burst length = 1
(MIN.), Io = 0mA
One bank active
CL = 3
720
680
mA
1,2
CL = 2
680
640
Precharge standby
current in power
down mode
ICC2P
IL(MAX.) tCK = 15ns
24
mA
ICC2PS
IL(MAX) tCK =
16
Precharge standby cur-
rent in Nonpower down
mode
ICC2N
IH(MIN.) tCK = 15ns
IH(MIN.)
Input signals are changed.
one time during 30ns.
300
mA
ICC2NS
IH(MIN.), tCK =
IL(MAX.)
Input signals are stable.
60
Active standby current in
power down mode
ICC3P
IL(MAX.), tCK = 15ns
36
mA
ICC3PS
IL(MAX.), tCK =
32
Active standby current in
nonpower down mode
ICC3N
IH(MAX.), tCK = 15ns
IH(MIN.)
Input signals are changed
one time during 30ns
300
mA
ICC3NS
IH(MIN.) tCK =
IL(MAX.)
Input signals are stable.
150
Operating current
(Burst mode)
ICC4
(MIN.),Io = 0mA
Burst length = 4
CL = 3
960
840 mA
1,2
CL = 2
920
840
800
Refresh current
ICC5
(MIN.)
CL = 3
880
800 mA
2
CL = 2
840
760
Self refresh current
ICC6
16
mA
Input leakage current
ILI
,
+ 0.3V
Pins not under test = 0V
-40
40
-40
40
-40
40
uA
Output leakage current
ILO
,
+ 0.3V
DQ# in H - Z., Dout disabled
-5
5
-5
5
-5
5
uA
Output Low Voltage
VOL
IOL = 2mA
0.4
V
Output High Voltage
VOH
IOH = -2mA
2.4
V
t
R C
t
RC
≥
CKE
V
≤
CKE
V
≤
∞
CKE
V
≥
CS
V
≥
CKE
V
≥
∞
CLK
V
≤
CKE
V
≤
CKE
V
≤
∞
CKE
V
≥
CS
V
≥
CKE
V
≥
∞
CLE
V
≤
t
C K
t
CK
≥
t
R C
t
RC
≥
CKE
0.2V
≤
V
I N
0
≥
V
I N
V
D D
≤
V
OUT
0
≥
V
OUT
V
DD
≤
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