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參數(shù)資料
| 型號： | MR0A08ACTS35C |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 256K x 16位的3.3V異步磁阻隨機(jī)存取內(nèi)存 |
| 文件頁數(shù)： | 6/22頁 |
| 文件大小： | 154K |
| 代理商： | MR0A08ACTS35C |
MR2A16A Data Sheet, Rev. 4
6
Freescale Semiconductor
Electrical Specifications
Direct Current (dc)
Table 5. dc Characteristics
Parameter
Symbol
I
lkg(I)
I
lkg(O)
Min
—
—
Typ
—
—
Max
±
1
±
1
Unit
μ
A
μ
A
Input leakage current
Output leakage current
Output low voltage
(I
OL
= +4 mA)
(I
OL
= +100
μ
A)
Output high voltage
(I
OH
= –4 mA)
(I
OH
= –100 mA)
V
OL
—
—
0.4
V
SS
+ 0.2
V
V
OH
2.4
V
DD
– 0.2
—
—
V
Table 6. Power Supply Characteristics
Parameter
Symbol
Typ
Max
Unit
ac active supply current — read modes
1
(I
Out
= 0 mA, V
DD
= max)
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
ac active supply current — write modes
1
(V
DD
= max)
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
ac standby current
(V
DD
= max, E = V
IH
)
(no other restrictions on other inputs)
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
CMOS standby current
(E
≥
V
DD
– 0.2 V and V
In
≤
V
SS
+ 0.2 V or
≥
V
DD
– 0.2 V)
(V
DD
= max, f = 0 MHz)
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
I
DDR
55
TBD
TBD
80
TBD
TBD
mA
I
DDW
105
TBD
TBD
155
TBD
TBD
mA
I
SB1
18
TBD
TBD
28
TBD
TBD
mA
I
SB2
9
TBD
TBD
12
TBD
TBD
mA
NOTES:
1
All active current measurements are measured with one address transition per cycle.
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| MR1A08AYS35 | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR27C210-15 | x16 EPROM |
| MR27C210-17 | x16 EPROM |
| MR27C210-20 | x16 EPROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR0A08ACYS35 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A08AVTS35C | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A08AVYS35 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A08AYS35 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A08BCMA35 | 功能描述:NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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