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參數(shù)資料
| 型號： | MR0A08ACTS35C |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 256K x 16位的3.3V異步磁阻隨機(jī)存取內(nèi)存 |
| 文件頁數(shù)： | 5/22頁 |
| 文件大小： | 154K |
| 代理商： | MR0A08ACTS35C |
Electrical Specifications
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
5
Table 4. Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Power supply voltage
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
Write inhibit voltage
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
V
DD
3.0
1
3.0
2
3.0
2
3.3
3.3
3.3
3.6
3.6
3.6
V
V
WI
2.5
2.5
2.5
2.7
2.7
2.7
3.0
1
3.0
2
3.0
2
V
DD
+
0.3
3
0.8
V
Input high voltage
V
IH
2.2
—
V
Input low voltage
Operating temperature
MR2A16ATS35C (Commercial)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
V
IL
–0.5
4
—
V
T
A
0
-40
-40
70
85
105
C
NOTES:
1
After power up or if V
DD
falls below V
WI
, a waiting period of 2
μ
s must be observed, and E and W
must remain high for 2
μ
s. Memory is designed to prevent writing for all input pin conditions if V
DD
falls below minimum V
WI
.
After power up or if V
DD
falls below V
WI
, a waiting period of 2 ms must be observed, and E and W
must remain high for 2 ms. Memory is designed to prevent writing for all input pin conditions if V
DD
falls below minimum V
WI
.
V
IH
(max) = V
DD
+ 0.3 Vdc; V
IH
(max) = V
DD
+ 2.0 Vac (pulse width
≤
10 ns) for I
≤
20.0 mA.
V
IL
(min) = –0.5 Vdc; V
IL
(min) = –2.0 Vac (pulse width
≤
10 ns) for I
≤
20.0 mA.
2
3
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MR1A08AYS35 | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR27C210-15 | x16 EPROM |
| MR27C210-17 | x16 EPROM |
| MR27C210-20 | x16 EPROM |
| MR27C210-25 | x16 EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR0A08ACYS35 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A08AVTS35C | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A08AVYS35 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A08AYS35 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A08BCMA35 | 功能描述:NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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