
4–17
Motorola Sensor Device Data
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ELECTRICAL CHARACTERISTICS
(Voltages Referenced to VSS, Rbias = 3.9 M
to VDD, TA = –30
°
to 70
°
C Unless Otherwise Indicated)
Symbol
Parameter
Test Condition
VDD
V
Guaranteed
Limit
Unit
VDD
VIL
Power Supply Voltage Range
—
3.5 to 14.0
V
Maximum Low–Level Input Voltage, MOSFETs
Wired as Inverters; i.e., IN A tied to IN B, OUT
A to OUT B, OUT C1 to OUT C2.
Vout = 9.0 V, |Iout|
1
μ
A
10.0
2.0
V
VIH
Minimum High–Level Input Voltage, MOSFETs
Wired as Inverters; i.e., IN A tied to IN B, OUT
A to OUT B, OUT C1 to OUT C2.
Vout = 1.0 V, |Iout|
1
μ
A
10.0
8.0
V
VIO
Comparator Input Offset Voltage
TA = 25
°
C, Over Common Mode
Range
10.0
50
mV
TA = 0
°
to 50
°
C, Over Common
Mode Range
3.5 to
14.0
75
VCM
Comparator Common Mode Voltage Range
3.5 to
14.0
0.7 to
VDD
1.5
V
VOL
Maximum Low–Level Comparator Output Voltage
IN +: Vin = VSS, IN
Iout = 30
μ
A
: Vin = VDD,
10.0
0.5
V
VOH
Minimum High–Level Comparator Output Voltage
IN +: Vin = VDD, IN
Iout =
: Vin = VSS,
30
μ
A
10.0
9.5
V
VOO
Buffer Amp Output Offset Voltage
Rload = 10 M
to VDD or VSS, Over
Common Mode Range
—
100
mV
VOL
Maximum Low–Level Output Voltage, MOSFETs
Wired as Inverters; i e IN A tied to IN B OUT
Wired as Inverters i.e., IN A tied to IN B, OUT
A to OUT B, OUT C1 to OUT C2.
OUT C1, OUT C2: Iout = 1.1 mA
10.0
0.5
V
OUT A, OUT B: Iout = 270
μ
A
10.0
0.5
V
VOH
Minimum High–Level Output Voltage, MOSFETs
Wired as Inverters; i e IN A tied to IN B OUT
Wired as Inverters i.e., IN A tied to IN B, OUT
A to OUT B, OUT C1 to OUT C2.
OUT C1, OUT C2: Iout =
1.1 mA
10.0
9.5
V
OUT A, OUT B: Iout = 270
μ
A
10.0
9.5
V
Iin
Maximum Input Leakage
Current
IN + (DIP Only)
TA = 25
°
C, 40% R.H.,
Vin = VSS or VDD
10.0
1.0
pA
IN + (DIP Only)
TA = 50
°
C,
Vin = VSS or VDD
10.0
6.0
IN + (SOG), IN A, IN B, IN C, IN
Vin = VSS or VDD
IN A, IN C: Vin = VDD,
OUT A, OUT C2: Vout = VSS
or VDD
10.0
40
nA
IOZ
Maximum Off–State MOSFET Leakage Current
10.0
100
nA
IN B, IN C: Vin = VSS,
OUT B, OUT C1: Vout = VSS
or VDD
TA = 25
°
C
IN A, IN B, IN C: Vin = VSS or VDD,
|VIN +
VIN
| = 100 mV,
Iout = 0
μ
A
f = 1 kHz
10.0
100
IDD
Maximum Quiescent Current
10.0
10
μ
A
Cin
Maximum Input Capacitance
IN +
Other Inputs
—
—
5.0
15
pF
F
Freescale Semiconductor, Inc.
n
.