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參數(shù)資料
| 型號： | MPSW51A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | One Watt High Current Transistors(PNP Silicon) |
| 中文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-10, TO-226AE, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MPSW51A |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
MPSW51
MPSW51A
VCEO
–30
–40
Vdc
Collector–Base Voltage
MPSW51
MPSW51A
VCBO
–40
–50
Vdc
Emitter–Base Voltage
VEBO
IC
PD
–5.0
Vdc
Collector Current — Continuous
–1000
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
1.0
8.0
Watts
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
2.5
20
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
125
°
C/W
Thermal Resistance, Junction to Case
50
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
MPSW51
MPSW51A
V(BR)CEO
–30
–40
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100 Adc, IE = 0)
MPSW51
MPSW51A
V(BR)CBO
–40
–50
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100 Adc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –40 Vdc, IE = 0)
MPSW51
MPSW51A
ICBO
—
—
–0.1
–0.1
μ
Adc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–0.1
μ
Adc
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSW51/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
23
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSW51 | One Watt High Current Transistors(PNP Silicon) |
| MPSW51A | ne Watt High Current Transistors |
| MPSW92 | One Watt High Voltage Transistor |
| MPSW92 | One Watt High Voltage Transistor(PNP Silicon) |
| MPX10 | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSW51AG | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRA | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRAG | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRP | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRPG | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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