- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄374491 > MPSIG001 (M-Pulse Microwave Inc.) Low OperatingVoltage, High fT SiGe Microwave Transistors PDF資料下載
參數(shù)資料
| 型號(hào)： | MPSIG001 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Low OperatingVoltage, High fT SiGe Microwave Transistors |
| 中文描述： | 低OperatingVoltage，微波高fT的硅鍺晶體管 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | MPSIG001 |
Low Operating Voltage, High fT SiGe Microwave Transistors MPSIG001 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Electrical Specifications @ 25
°
C
Parameter
Condition
Symbol
Min
Typical
Max
Units
Collector Cut-off Current
V
CB
= 2 volts
I
E
= 0
μ
A
Ic = 10 uA
I
CBO
100
μ
A
Collector to Emitter
Beakdown Voltage
BVCEO
2.5
V
Collector to Base
Breakdown Voltage
I
C
= 10 uA
BVCBO
7
V
Collector to Emitter
Breakdown Voltage
I
E
= 10 uA
BVEBO
3
V
Collector to Substrate
Breakdown Voltage
I
R
= 10 uA
BVSO
30
45
V
Forward Current Gain
V
CE
= 3 volts
I
C
= 5 mA
V
CC
= 10 uA
h
FE
20
100
300
Base Emitter Voltage
VBE
700
800
mV
Typical Common Emitter Scattering Parameters in the MIcro-X Package
MPSIG001-535, V
CE
= 2 Volts, I
C
= 5 mA
Frequency
S11E
(MHz)
Mag.
Angle
S21E
S12E
S22E
Mag.
Angle
Mag.
Angle
Mag
Angle
100
200
300
400
500
1000
1500
2000
2500
3000
.843
.792
.730
.671
.622
.455
.400
.341
.355
.366
-17.6
-34.2
-49.3
-62.5
-73.4
-108.9
-132.9
-148.7
-167.8
-179.4
15.1
14.0
12.7
11.4
10.2
6.1
4.2
3.3
2.8
2.4
165.5
152.9
142.5
133.8
127.1
108.4
97.6
92.9
89.7
91.1
0.021
0.039
0.056
0.065
0.072
0.094
0.108
0.123
0.142
0.160
78.2
69.1
62.7
57.4
53.7
50.4
53.9
59.3
64.8
71.4
0.962
0.892
0.805
0.716
0.639
0.377
0.280
0.208
0.208
0.204
-15.4
-29.7
-41.7
-51.8
-59.9
-87.5
-110.0
-125.8
-147.2
-166.8
MPSIG001-535, V
CE
= 2 Volts, I
C
= 10 mA
Frequency
(MHz)
S11E
S21E
S12E
S22E
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
100
200
300
400
500
1000
1500
2000
2500
3000
.708
.629
.562
.498
.461
.343
.337
.297
.352
.373
-27.1
-51.2
-70.9
-86.2
-98.1
-133.4
-155.1
-171.5
173.6
162.8
24.5
21.8
18.4
15.6
13.4
7.5
5.1
3.9
3.3
2.9
159.8
143.8
132.1
123.5
117.3
102.3
93.8
90.4
88.7
90.9
0.021
0.034
0.044
0.052
0.057
0.079
0.102
0.128
0.157
0.178
73.8
65.2
59.1
56.4
55.6
60.4
65.6
70.4
73.6
78.1
0.925
0.801
0.681
0577
0.498
0.280
0.229
0.168
0.214
0.235
-22.7
-42.1
-56.7
-68.3
-76.9
-108.7
-134.4
-171.8
171.9
135.9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPW1034 | 25-30W, Wide Input Range, Single & Dual Output DC/DC Converters |
| MPW1000 | 25-30W, Wide Input Range, Single & Dual Output DC/DC Converters |
| MPW1021 | 25-30W, Wide Input Range, Single & Dual Output DC/DC Converters |
| MPW1022 | 25-30W, Wide Input Range, Single & Dual Output DC/DC Converters |
| MPW1023 | 25-30W, Wide Input Range, Single & Dual Output DC/DC Converters |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-IH RD | 制造商:Phoenix Contact 功能描述: |
| MPSITL610BIN WAF | 制造商:Texas Instruments 功能描述: |
| MPSKTPS7150AIK WAF | 制造商:Texas Instruments 功能描述: |
| MPSL01 | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS-L01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon Transistors |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。