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參數(shù)資料
| 型號(hào)： | MPSIG001 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Low OperatingVoltage, High fT SiGe Microwave Transistors |
| 中文描述： | 低OperatingVoltage，微波高fT的硅鍺晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | MPSIG001 |
Low Operating Voltage, High f
T
SiGe Transistors MPSIG001 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Maximum Ratings (TA = 25
°
C)
MPSIG001 Series
Collector-Base Voltage
V
CBO
10 V
Collector-Emitter Voltage
V
CE
3 V
Emitter-Base Voltage
V
EB
1.5 V
Collector Current
I
C
75 mA
Junction Operating Temperature
T
j
200
°
C
Storage Temperature
Chip or Ceramic Packages
T
S
-65
°
C to +200
°
C
Power Dissipation
Micro-X Pkg (MPSIG001-535)
Electrical Specifications @ 25
°
C
MPSIG001 Series
Parameter of Test
300 mW
150
°
C
Condition
Symbol
Units
MPSIG00100
Chip
MPSIG001-535
Micro-X
Gain Bandwidth Product
V
CE
= 2 V
I
C
= 20 mA
V
CE
= 2 V
I
C
= 5 mA
f = .9 GHz
f = 2 GHz
f
T
GHz
18 typ
18 typ
Insertion Power Gain
|S
21E
|
2
dB
17 typ
11 typ
16 min
10.0 min
Noise Figure
V
CE
= 2 V
I
C
= 5 mA
f = .9 GHz
f = 2 GHz
NF
dB
.9 typ
1.1 typ
.9 typ
1.1 typ
Unilateral Gain
V
CE
= 2 V
I
C
= 5 mA
f = 2 GHz
GTU (max)
dB
13 typ
12 typ
Maximum Available Gain
V
CE
= 2 V
I
C
= 5 mA
f = .9 GHz
f = 2 GHz
MAG
dB
19 typ
12 typ
18 typ
11 typ
Output Power at 1 dB
Compression
V
CE
= 2 V
I
C
= 20 mA
f = .9 GHz
P
1dB
dBm
15 typ
14 typ
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