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參數(shù)資料
| 型號： | MPSH10 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 1 GHz general purpose switching transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 77K |
| 代理商： | MPSH10 |
1998 Aug 27
3
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
MPSH10
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector lead, 4 mm from the body.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
R
th j-a
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
note 1
125
250
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
0.5
0.95
100
100
0.7
0.65
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEon
I
CBO
I
EBO
h
FE
C
re
C
rb
f
T
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter saturation voltage
base-emitter ON voltage
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter feedback capacitance
collector-base feedback capacitance
transition frequency
open emitter; I
C
= 100
μ
A; I
E
= 0
open base; I
C
= 1 mA; I
B
= 0
open collector; I
E
= 10
μ
A; I
C
= 0
I
C
= 4 mA; I
B
= 0.4 mA
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 25 V; I
E
= 0
V
CB
= 25 V; I
C
= 0
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 10 V; I
E
= i
e
= 0; f = 1 MHz
V
CB
= 10 V; I
C
= i
c
= 0; f = 1 MHz
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°
C
V
CB
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°
C
30
25
3
60
0.35
650
V
V
V
V
V
nA
nA
pF
pF
MHz
r
b
C
c
collector-base time constant
9
ps
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| MPSH10_D74Z | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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