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參數(shù)資料
| 型號(hào)： | MPSA94 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 289K |
| 代理商： | MPSA94 |
2002. 5. 28
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPSA94
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH VOLTAGE APPLICATION.
FEATURES
°§High Breakdown Voltage.
°§Complementary to MPSA44.
MAXIMUM RATING (Ta=25°…)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2
3
B
A
J
K
G
H
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+_
ELECTRICAL CHARACTERISTICS (Ta=25°…)
*Pulse Test : Pulse WidthZ300S, Duty CycleZ2%
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-100A, IE=0
-400
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
-400
-
V
Collector-Emitter Breakdown Voltage
V(BR)CES
IC=-100A, IB=0
-400
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10A, IC=0
-6.0
-
V
Collector Cut off Current
ICBO
VCB=-300V, IE=0
-
-100
nA
Collector Cut off Current
ICES
VCE=-400V, IB=0
-
-1
A
Emitter Cutoff Current
IEBO
VEB=-4V, IC=0
-
-100
nA
DC Current Gain
*
hFE
VCE=-10V, IC=-1mA
40
-
VCE=-10V, IC=-10mA
50
-
300
VCE=-10V, IC=-50mA
45
-
VCE=-10V, IC=-100mA
40
-
Collector-Emitter Saturation Voltage
*
VCE(sat)
IC=-10mA, IB=-1mA
-
-0.5
V
Base-Emitter Saturation Voltage
*
VBE(sat)
IC=-10mA, IB=-1mA
-
-0.75
V
Collector Output Capacitance
Cob
VCB=-20V, IE=0, f=1MHz
-
7
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-300
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
°…
Storage Temperature Range
Tstg
-55°≠150
°…
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相關(guān)代理商/技術(shù)參數(shù) |
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| MPSA94_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon High Voltage Transistor 625mW |
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