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參數(shù)資料
| 型號： | MPSA94 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 29K |
| 代理商： | MPSA94 |
PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* High voltage
APPLICATIONS
* Telephone dialler circuit
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-6
V
Continuous Collector Current
IC
-300
mA
Power Dissipation at Tamb=25°C
Ptot
625
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-400
V
IC=-100A, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-400
V
IC=-1mA, IB=0*
Collector-Emitter
Breakdown Voltage
V(BR)CES
-400
V
IC=-100A, IE=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
-6
V
IE=-100A, IC=0
Collector Cut-Off
Current
ICBO
-0.1
A
VCB=-400V, IE=0
Collector Cut-Off
Current
ICES
-500
nA
VCE=-400V
Emitter Cut-Off Current IEBO
-0.1
A
VEB=-4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.4
-0.5
-0.75
VIC=-1mA, IB=-0.1mA*
IC=-10mA, IB=-1mA*
IC=-50mA, IB=-5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.75
V
IC=-10mA, IB=-1mA*
Static Forward Current
Transfer Ratio
hFE
40
50
45
40
300
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
*Measured under pulsed conditions. Pulse width=300s. Duty cycle ≤2%
TO92
MPSA94
3-86
E
B
C
Not Recommended for New Design
Please Use ZTX758
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