- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384743 > MPSA29G (ON SEMICONDUCTOR) Darlington Transistors NPN Silicon PDF資料下載
參數(shù)資料
| 型號(hào)： | MPSA29G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Transistors NPN Silicon |
| 中文描述： | 500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, CASE 29-11, TO-226, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | MPSA29G |
MPSA28, MPSA29
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 100 Adc, V
BE
= 0)
MPSA28
MPSA29
V
(BR)CES
80
100
Vdc
CollectorBase Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
MPSA28
MPSA29
V
(BR)CBO
80
100
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
12
Vdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
MPSA28
MPSA29
I
CBO
100
100
nAdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
BE
= 0)
(V
CE
= 80 Vdc, V
BE
= 0)
MPSA28
MPSA29
I
CES
500
500
nAdc
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
I
EBO
100
nAdc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
h
FE
10,000
10,000
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.01 mAdc)
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
V
CE(sat)
0.7
0.8
1.2
1.5
Vdc
BaseEmitter On Voltage
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
1.4
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 2)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
fT
125
200
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
2. f
T
= h
fe
f
test
.
Cobo
5.0
8.0
pF
300 s, Duty Cycle
2.0%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSA29RLRP | Darlington Transistors NPN Silicon |
| MPSA29RLRPG | Darlington Transistors NPN Silicon |
| MPV3J80U8PJ-R | 9x14 mm, 3.3 Volt, PECL/LVDS, VCXO |
| MPV3J80B1QJ-R | 9x14 mm, 3.3 Volt, PECL/LVDS, VCXO |
| MPV3J80B8PJ | 9x14 mm, 3.3 Volt, PECL/LVDS, VCXO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSA29RLRP | 功能描述:達(dá)林頓晶體管 500mA 100V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA29RLRPG | 功能描述:達(dá)林頓晶體管 500mA 100V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA30 | 制造商:Motorola Inc 功能描述: |
| MPSA42 | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS-A42 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。