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參數(shù)資料
| 型號(hào)： | MPSA20G |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Amplifier Transistor NPN Silicon |
| 中文描述： | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | MPSA20G |
MPSA20
http://onsemi.com
6
Figure 19. Thermal Response
t, TIME (ms)
1.0
0.7
0.01
r
(
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k 2.0k
5.0k 10k
20k
50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN569)
Z
JA(t)
= r(t)
R
JA
T
J(pk)
T
A
= P
(pk)
Z
JA(t)
t
1
t
2
P
(pk)
FIGURE 20
Figure 21.
T
J
, JUNCTION TEMPERATURE (
°
C)
10
4
4
0
I
Figure 22.
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
400
2.0
I
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 20. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 19 was calculated for various
duty cycles.
To find Z
JA(t)
, multiply the value obtained from Figure
19 by the steady state value R
JA
.
Example:
Dissipating 2.0 watts peak under the following conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P
(pk)
x R
JA
= 0.22 x 2.0 x 200 = 88
°
C.
For more information, see ON Semiconductor
Application Note AN569/D, available on our website at
www.onsemi.com
.
The safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 22 is based upon T
J(pk)
= 150
°
C; T
C
or T
A
is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided T
J(pk)
≤
150
°
C.
T
J(pk)
may be calculated from the data in Figure 19. At
high case or ambient temperatures, thermal limitations
will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
10
2
10
1
10
0
10
1
10
2
10
3
2
0
0
+20
+40
+60
+80 +100 +120 +140 +160
V
CC
= 30 Vdc
I
CEO
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 Vdc
T
A
= 25
°
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 s
T
C
= 25
°
C
1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0
8.0
10
20
40
T
J
= 150
°
C
100 s
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