參數(shù)資料
型號: MPSA14D74Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 1200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 7/14頁
文件大?。?/td> 887K
代理商: MPSA14D74Z
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 100
A, I
B = 0
30
V
ICBO
Collector-Cutoff Current
VCB = 30 V, IE = 0
100
nA
IEBO
Emitter-Cutoff Current
VEB = 10 V, IC = 0
100
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
10,000
20,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 0.1 mA
1.5
V
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5 V,
f = 100 MHz
125
MHz
Typical Characteristics
Collector-Emitt er Saturation
Voltage vs Collect or Curre nt
1
10
100
1000
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRE NT (mA)
V
-
C
O
L
E
C
T
O
R
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
CE
S
A
T
25°C
- 40 °C
125 °C
β = 1000
Typical Pulsed Current Gain
vs Collect or Curre nt
0.001
0.01
0.1
1
0
50
100
150
200
250
I - COLLECTOR CURRENT (A)
h
-
T
YPI
C
A
L
PU
L
SED
C
U
R
EN
T
G
A
IN
(
K
)
C
FE
25 °C
125 °C
- 40 °C
V
= 5V
CE
Base-Emitter Saturation
Voltage vs Collect or Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRE NT (mA)
V
-B
A
S
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
BE
S
A
T
25 °C
- 40 °C
125 °C
β = 1000
Base Emitter ON Voltage vs
Collect or Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
O
N
V = 5V
CE
- 40 °C
25 °C
125 °C
MPSA14
/
MMBT
A14
/
PZT
A14
NPN Darlington Transistor
(continued)
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