參數(shù)資料
型號: MMBTA14D87
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 1200 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/14頁
文件大?。?/td> 887K
代理商: MMBTA14D87
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced
from Process 05.
MMBTA14
MPSA14
PZTA14
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current - Continuous
1.2
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Characteristic
Max
Units
MPSA14
*MMBTA14
**PZTA14
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
Thermal Characteristics
TA = 25°C unless otherwise noted
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1N
B
C
SOT-223
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
A14, Rev B
MPSA14
/
MMBT
A14
/
PZT
A14
相關PDF資料
PDF描述
MPSA14D26Z 1200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA14J05Z 1200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MPSA17ZL1 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA17RLRM 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA17RL 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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