- 您現在的位置：買賣IC網 > PDF目錄383634 > MPS4126RLRA (ON SEMICONDUCTOR) Amplifier Transistor PNP Silicon PDF資料下載
參數資料
| 型號： | MPS4126RLRA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Amplifier Transistor PNP Silicon |
| 中文描述： | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數： | 2/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MPS4126RLRA |
MPS4126
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 1.0 mA, I
B
= 0)
V
(BR)CEO
25
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10 A, I
E
= 0)
V
(BR)CBO
25
Vdc
EmitterBase Breakdown Voltage
(I
C
= 0, I
E
= 10 A)
V
(BR)EBO
4.0
Vdc
Collector Cutoff Current
(V
CB
= 20 V, I
E
= 0)
I
CBO
50
nAdc
Emitter Cutoff Current
(V
EB
= 3.0 V, I
C
= 0)
I
EBO
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2.0 mA, V
CE
= 1.0 V)
(I
C
= 50 mA, V
CE
= 1.0 V)
h
FE
120
60
360
CollectorEmitter Saturation Voltage
(I
C
= 50 mA, I
B
= 5.0 mA)
V
CE(sat)
0.4
Vdc
BaseEmitter Saturation Voltage
(I
C
= 50 mA, I
B
= 5.0 mA)
V
BE(sat)
0.95
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(I
C
= 10 mA, V
CE
= 20 V, f = 100 MHz)
f
T
170
MHz
Output Capacitance
(V
CB
= 5.0 V, I
E
= 0, f = 1.0 MHz)
C
ob
4.5
pF
Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
C
ib
11.5
pF
SmallSignal Current Gain
(I
C
= 2.0 mA, V
CE
= 1.0 V, f = 1.0 kHz)
h
fe
120
480
Noise Figure
(I
C
= 100 A, V
CE
= 5.0 V, R
S
= 1.0 k , f = 1.0 kHz)
NF
4.0
dB
相關PDF資料 |
PDF描述 |
|---|---|
| MPS4126RLRAG | Amplifier Transistor PNP Silicon |
| MPS4249 | PNP (AMPLIFIER TRANSISTOR) |
| MPS4250A | PNP (AMPLIFIER TRANSISTOR) |
| MPS5172 | NPN (AMPLIFIER TRANSISTOR) |
| MPS5179G | High Frequency Transistor NPN Silicon |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS4126RLRAG | 功能描述:兩極晶體管 - BJT 200mA 25V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS4164BY WAF | 制造商:Texas Instruments 功能描述: |
| MPS4249 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PNP (AMPLIFIER TRANSISTOR) |
| MPS4250 | 功能描述:兩極晶體管 - BJT 40V Small Signal RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS4250_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP Silicon Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。