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參數(shù)資料
| 型號(hào)： | MPS2907A |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors(PNP)(小信號(hào)晶體管（PNP）) |
| 中文描述： | 小信號(hào)晶體管（民進(jìn)黨）（小信號(hào)晶體管（民進(jìn)黨）） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 39K |
| 代理商： | MPS2907A |
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at –I
C
= 10
μ
A, I
E
= 0
–V
(BR)CBO
60
–
Volts
Collector-Emitter Breakdown Voltage
at –I
C
= 10 mA, I
B
= 0
–V
(BR)CEO
60
–
Volts
Emitter-Base Breakdown Voltage
at –I
E
= 10
μ
A, I
C
= 0
–V
(BR)EBO
5
–
Volts
Collector-Emitter Saturation Voltage
at –I
C
= 150 mA, –I
B
= 15 mA
at –I
C
= 500 mA, –I
B
= 50 mA
–V
CEsat
–V
CEsat
–
–
0.4
1.6
Volts
Volts
Base-Emitter Saturation Voltage
at –I
C
= 150 mA, –I
B
= 15 mA
at –I
C
= 500 mA, –I
B
= 50 mA
–V
BEsat
–V
BEsat
–
–
1.3
2.6
Volts
Volts
Collector Cutoff Current
at –V
EB
= 0.5 V, –V
CE
= 30 V
–I
CEX
–
50
nA
Collector Cutoff Current
at –V
CB
= 50 V, I
E
= 0
at –V
CB
= 50 V, I
E
= 0, T
A
=150
°
C
–I
CBO
μ
A
0.01
10
–
Base Cutoff Current
at –V
EB
= 0.5 V, –V
CE
= 30 V
–I
BL
–
50
nA
DC Current Gain
at –V
CE
= 10 V, –I
C
= 0.1 mA
at –V
CE
= 10 V, –I
C
= 1 mA
at –V
CE
= 10 V, –I
C
= 10 mA
at –V
CE
= 10 V, –I
C
= 150 mA
at –V
CE
= 10 V, –I
C
= 500 mA
h
FE
h
FE
h
FE
h
FE
h
FE
75
100
100
100
50
–
–
–
–
–
–
–
–
300
–
Gain-Bandwidth Product
at –V
CE
= 20 V, –I
C
= 50 mA, f = 100 MHz
f
T
200
–
MHz
Output Capacitance
at –V
CB
= 10 V, f = 1 MHz, I
E
= 0
C
obo
–
8.0
pF
Emitter-Base Capacitance
at –V
EB
= 2.0 V, f = 1 MHz, I
E
= 0
C
ibo
–
30
pF
MPS2907A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS2907A\E6 | 功能描述:兩極晶體管 - BJT REORD 511-PN2907A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2907A_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
| MPS2907AG | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2907AG | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MPS2907A-H | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
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