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參數(shù)資料
| 型號(hào)： | MPS4356 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | 進(jìn)步黨硅外延平面晶體管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 163K |
| 代理商： | MPS4356 |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
MPS4356
TO-92
Plastic Package
General Purpose Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ T
a
=25oC
Derate Above 25oC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
UNITS
V
V
V
mA
mW
mW/oC
T
j
, T
stg
oC
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
R
th (j-c)
R
th (j-a)
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
SYMBOL
*V
CEO
V
CBO
V
EBO
I
CBO
TEST CONDITION
I
C
=10mA, I
B
=0
I
C
=10
μ
A, I
E
=0
I
E
=10
μ
A, I
C
=0
V
CB
=50V, I
E
= 0
V
CB
=50V, I
E
=0, T
a
=75oC
V
EB
=4V, I
C
= 0
V
CE
=10V, I
C
=100
μ
A
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=100mA
V
CE
=10V, I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
MIN
80
80
5
TYP
MAX
UNITS
V
V
V
nA
μ
A
nA
50
5.0
100
Emitter Cut Off Current
DC Current Gain
I
EBO
*h
FE
25
40
50
40
30
250
Collector Emitter Saturation Voltage
*V
CE (sat)
0.15
0.50
0.90
1.10
V
V
V
V
Base Emitter Saturation Voltage
*V
BE (sat)
*Pulse test pulse width<300
m
s, duty cycle < %
MPS4356Rev180303E
800
625
5.0
- 55 to +150
83.3
200
VALUE
80
80
5.0
EBC
Continental Device India Limited
Data Sheet
Page 1 of 5
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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