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參數(shù)資料
| 型號： | MPS2369 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching Transistors NPN Silicon(NPN型開關(guān)晶體管) |
| 中文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | MPS2369 |
MPS2369 MPS2369A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = –55
°
C)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55
°
C)
(IC = 30 mAdc, VCE = 0.4 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125
°
C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
Base–Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125
°
C)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55
°
C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
SMALL–SIGNAL CHARACTERISTICS
MPS2369A
MPS2369
MPS2369
MPS2369A
MPS2369A
MPS2369A
MPS2369
MPS2369A
hFE
—
20
40
40
20
30
20
20
—
—
—
—
—
—
—
—
120
—
120
—
—
—
—
—
—
MPS2369
MPS2369A
MPS2369A
MPS2369A
MPS2369A
VCE(sat)
—
—
—
—
—
—
—
—
—
—
0.25
0.20
0.30
0.25
0.50
Vdc
MPS2369
MPS2369A
MPS2369A
MPS2369A
MPS2369A
VBE(sat)
0.7
0.5
—
—
—
—
—
—
—
—
0.85
—
1.02
1.15
1.60
Vdc
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
MPS2369,A
Cobo
—
—
4.0
pF
Small–Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
MPS2369,A
hfe
5.0
—
—
—
Storage Time
(IB1 = IB2 = IC = 10 mAdc) (Figure 3)
MPS2369,A
ts
—
5.0
13
ns
Turn–On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
(Figure 1)
MPS2369,A
ton
—
8.0
12
ns
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc,
IB2 = 1.5 mAdc) (Figure 2)
MPS2369,A
toff
—
10
18
ns
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS2369A | 功能描述:兩極晶體管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2369AG | 功能描述:兩極晶體管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2369ARLRP | 功能描述:兩極晶體管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2369ARLRPG | 功能描述:兩極晶體管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2369ASTOA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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