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參數(shù)資料
| 型號： | MPS5179 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Frequency Transistor NPN Silicon(NPN型高頻晶體管) |
| 中文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 27K |
| 代理商： | MPS5179 |
High Frequency Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
12
Vdc
Collector–Base Voltage
20
Vdc
Emitter–Base Voltage
2.5
Vdc
Collector Current — Continuous
50
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
200
1.14
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
300
1.71
mW
mW/
°
C
Storage Temperature Range
Tstg
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0)
VCEO(sus)
12
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.001 mAdc, IE = 0)
V(BR)CBO
20
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0)
V(BR)EBO
2.5
—
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 150
°
C)
ON CHARACTERISTICS
ICBO
—
—
0.02
1.0
μ
Adc
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
hFE
25
250
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
—
0.4
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
—
1.0
Vdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 2
1
Publication Order Number:
MPS5179/D
MPS5179
ON Semiconductor Preferred Device
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS5179_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN RF Transistor |
| MPS5179_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Frequency Transistor NPN Silicon |
| MPS5179_D26Z | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MPS5179_D27Z | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MPS5179_D75Z | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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