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參數(shù)資料
| 型號： | MPQ6002 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116 |
| 封裝： | PLASTIC, DIP-14 |
| 文件頁數(shù)： | 23/34頁 |
| 文件大?。?/td> | 333K |
| 代理商： | MPQ6002 |
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MPQ6001 MPQ6002 MPQ6502
2–505
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN DATA
Figure 1. Normalized DC Current Gain
Figure 2. “ON” Voltages
Figure 3. Temperature Coefficients
Figure 4. Frequency Effects
Figure 5. Source Resistance Effects
1.0
2.0
0.5
IC, COLLECTOR CURRENT (mA)
1.0
0.5
0.3
0.2
1.0
100
0.5
IC, COLLECTOR CURRENT (mA)
1.4
1.0
1.2
0.8
0.4
0
IC, COLLECTOR CURRENT (mA)
–2.4
20
0.5
2.0
0.1
f, FREQUENCY (kHz)
5.0
4.0
3.0
2.0
1.0
0
RS, SOURCE RESISTANCE (k OHMS)
10
6.0
4.0
2.0
0
1.0
f = 1.0 kHz
h
FE
,DC
CURRENT
GAIN
(NORMALIZED)
V
,VOL
TAGE
(VOL
TS)
NF
,NOISE
FIGURE
(dB)
10
5.0
20
10
20
7.0
100
200
50
500
4.0
2.0
5.0
10
50
200
+1.6
+0.8
0
–0.8
–1.6
qVC FOR VCE(sat)
+25
°C
NF
,NOISE
FIGURE
(dB)
30
70
300
5.0
3.0
0.7
TJ = 150°C
–55
°C
500
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
1.0
100
0.5
20
2.0
5.0
10
50
200
500
,TEMPERA
TURE
COEFFICIENT
(mV/
C)
°
0.2
50
100
6.0
8.0
IC = 1.0 mA
0.5
2.0
0.1
1.0
10
5.0
20
0.2
50
100
IC = 10 mA
RS = 4.3 kW
IC = 100 mA
RS = 1.0 kW
100
mA
10
mA
qVB FOR VBE
VCE = 1.0 V
VCE = 10 V
NOISE FIGURE
(VCE = 10 Vdc, TA = 25°C)
–55
°C TO +25°C
+25
°C TO +150°C
0.6
0.2
TJ = 25°C
2.0
3.0
q
V
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