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參數(shù)資料
| 型號： | MPQ6426 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
| 封裝： | PLASTIC, DIP-14 |
| 文件頁數(shù)： | 1/34頁 |
| 文件大?。?/td> | 326K |
| 代理商： | MPQ6426 |
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2–506
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad Darlington
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
30
Vdc
Collector – Base Voltage
VCBO
40
Vdc
Emitter – Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
IC
500
mAdc
Each Die
Four Die
Equal
Power
Total Device Dissipation @ TA = 25°C(1)
Derate above 25
°C
PD
500
4.0
900
7.2
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
825
6.7
2400
19.2
mW
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
°C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
34
2.0
70
26
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
30
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
40
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
—
100
nAdc
1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPQ6426
CASE 646–06, STYLE 1
TO–116
1
14
12
3
4
5
6
7
14
13
12
11
10
9
8
NPN
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