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參數(shù)資料
| 型號(hào)： | MPQ3467 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| 封裝： | PLASTIC, DIP-14 |
| 文件頁數(shù)： | 1/34頁 |
| 文件大?。?/td> | 325K |
| 代理商： | MPQ3467 |
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2–479
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad Memory Driver
Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–40
Vdc
Collector – Base Voltage
VCBO
–40
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–1.0
Adc
Each
Transistor
Four
Transistors
Equal Power
Total Device Dissipation
@ TA = 25°C(1)
Derate above 25
°C
PD
650
5.2
1500
12
mW
mW/
°C
Total Device Dissipation
@ TC = 25°C
Derate above 25
°C
PD
1.25
10
3.2
25.6
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
RqJC
Junction
to Case
RqJA
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100
39
193
83.2
°C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
45
5.0
55
10
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–40
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–40
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
ICBO
—
–200
nAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–200
nAdc
1. Second Breakdown occurs at power levels greater than 2 times the power dissipation rating.
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPQ3467
Motorola Preferred Device
CASE 646–06, STYLE 1
TO–116
1
14
12
3
4
5
6
7
14
13
12
11
10
9
8
PNP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPQ3725 | 1 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-116 |
| MPQ3762 | 1.5 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ3798 | 50 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
| MPQ3906 | 200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
| MPQ6001 | 0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPQ3725 | 功能描述:兩極晶體管 - BJT Quad NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPQ3725A | 功能描述:兩極晶體管 - BJT NPN Quad Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPQ3762 | 制造商:Motorola Inc 功能描述: |
| MPQ3798 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:PNP SILICON QUAD TRANSISTOR |
| MPQ3799 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:PNP SILICON QUAD TRANSISTOR |
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