參數(shù)資料
型號: MPC8568E-MDS-PB
廠商: Freescale Semiconductor
文件頁數(shù): 51/139頁
文件大小: 0K
描述: MOD DEV SYSTEM POWERQUICC III
標準包裝: 1
系列: PowerQUICC III™
類型: MPU
適用于相關產(chǎn)品: MPC8568E
所含物品:
MPC8568E/MPC8567E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 1
Freescale Semiconductor
19
DDR and DDR2 SDRAM
6.1
DDR SDRAM DC Electrical Characteristics
Table 12 provides the recommended operating conditions for the DDR2 SDRAM component(s) of the
MPC8568E when GVDD(typ) = 1.8 V.
Table 13 provides the DDR capacitance when GV
DD(typ) = 1.8 V.
Table 14 provides the recommended operating conditions for the DDR SDRAM component(s) when
GVDD(typ) = 2.5 V.
Table 12. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
1.7
1.9
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF –0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF+0.125
GVDD +0.3
V
Input low voltage
VIL
–0.3
MVREF – 0.125
V
Output leakage current
IOZ
–10
10
μA4
Output high current (VOUT = 1.420 V)
IOH
–13.4
mA
Output low current (VOUT = 0.280 V)
IOL
13.4
mA
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver.
Peak-to-peak noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
VOUT GVDD.
Table 13. DDR2 SDRAM Capacitance for GVDD(typ)=1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT
(peak-to-peak) = 0.2 V.
Table 14. DDR SDRAM DC Electrical Characteristics for GVDD (typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.3
2.7
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.15
GVDD + 0.3
V
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