參數(shù)資料
型號: MPC8535AVTANG
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, 800 MHz, MICROPROCESSOR, PBGA783
封裝: 29 X 29 MM, 2.80 MM HEIGHT, 1 MM PITCH, LEAD FREE, PLASTIC, FCBGA-783
文件頁數(shù): 14/126頁
文件大?。?/td> 2861K
代理商: MPC8535AVTANG
MPC8535E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 3
Thermal
Freescale Semiconductor
110
Simulations with heat sinks were done with the package mounted on the 2s2p thermal test board. The thermal interface material
was a typical thermal grease such as Dow Corning 340 or Wakefield 120 grease.For system thermal modeling, the MPC8535E
thermal model without a lid is shown in Figure 72 The substrate is modeled as a block 29 x 29 x 1.2 mm with an in-plane
conductivity of 19.8 W/mK and a through-plane conductivity of 1.13 W/mK. The solder balls and air are modeled as a single
block 29 x 29 x 0.5 mm with an in-plane conductivity of 0.034 W/mK and a through plane conductivity of 12.1 W/mK. The
die is modeled as 9.6 x 9.57 mm with a thickness of 0.75 mm. The bump/underfill layer is modeled as a collapsed thermal
resistance between the die and substrate assuming a conductivity of 7.5 W/mK in the thickness dimension of 0.07 mm. The die
is centered on the substrate. The thermal model uses approximate dimensions to reduce grid. Please refer to the case outline for
actual dimensions.
2.24.2
Recommended Thermal Model
Junction-to-ambient (@200 ft/min)
Four layer board (2s2p)
RθJA
14
°C/W
1, 2
Junction-to-board thermal
RθJB
10
°C/W
3
Junction-to-case thermal
RθJC
< 0.1
°C/W
4
Notes
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
2. Per JEDEC JESD51-2 and JESD51-6 with the board (JESD51-9) horizontal.
3. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured
on the top surface of the board near the package.
4. Thermal resistance between the active surface of the die and the case top surface determined by the cold plate method
(MIL SPEC-883 Method 1012.1) with the calculated case temperature. Actual thermal resistance is less than 0.1 C/W
C/W
Table 80. MPC8535E Thermal Model
Conductivity
Value
Units
Die (9.6x9.6
× 0.85 mm)
Silicon
Temperature dependent
Bump/Underfill (9.6 x 9.6
× 0.07 mm) Collapsed Thermal Resistance
Kz
7.5
W/mK
Substrate (29
× 29 × 1.2 mm)
Kx
19.8
W/mK
Ky
19.8
Kz
1.13
Solder and Air (29
× 29 × 0.5 mm)
Kx
0.034
W/mK
Ky
0.034
Kz
12.1
Table 79. Package Thermal Characteristics (continued)
Characteristic
JEDEC Board
Symbol
Value
Unit
Notes
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