參數(shù)資料
型號(hào): MPC8349CZUAJFB
廠商: Freescale Semiconductor
文件頁數(shù): 7/87頁
文件大?。?/td> 0K
描述: IC MPU POWERQUICC II PRO 672TBGA
標(biāo)準(zhǔn)包裝: 24
系列: MPC83xx
處理器類型: 32-位 MPC83xx PowerQUICC II Pro
速度: 533MHz
電壓: 1.2V
安裝類型: 表面貼裝
封裝/外殼: 672-LBGA
供應(yīng)商設(shè)備封裝: 672-TBGA(35x35)
包裝: 托盤
配用: MPC8349E-MITX-GP-ND - KIT REFERENCE PLATFORM MPC8349E
MPC8349E-MITXE-ND - BOARD REFERENCE FOR MPC8349
MPC8349EA-MDS-PB-ND - KIT MODULAR DEV SYSTEM MPC8349E
MPC8349EA PowerQUICC II Pro Integrated Host Processor Hardware Specifications, Rev. 13
Freescale Semiconductor
15
DDR and DDR2 SDRAM
Table 11 lists the PLL and DLL lock times.
6
DDR and DDR2 SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8349EA. Note that DDR SDRAM is GVDD(typ) = 2.5 V and DDR2 SDRAM is GVDD(typ) = 1.8 V.
The AC electrical specifications are the same for DDR and DRR2 SDRAM.
NOTE
The information in this document is accurate for revision 3.0 silicon and
later. For information on revision 1.1 silicon and earlier versions see the
MPC8349E PowerQUICC II Pro Integrated Host Processor Hardware
Document,” for silicon revision level determination.
6.1
DDR and DDR2 SDRAM DC Electrical Characteristics
Table 12 provides the recommended operating conditions for the DDR2 SDRAM component(s) of the
MPC8349EA when GVDD(typ) = 1.8 V.
Table 11. PLL and DLL Lock Times
Parameter/Condition
Min
Max
Unit
Notes
PLL lock times
100
μs—
DLL lock times
7680
122,880
csb_clk cycles
1, 2
Notes:
1. DLL lock times are a function of the ratio between the output clock and the coherency system bus clock (csb_clk). A 2:1 ratio
results in the minimum and an 8:1 ratio results in the maximum.
2. The csb_clk is determined by the CLKIN and system PLL ratio. See Section 19, “Clocking.
Table 12. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
1.71
1.89
V
1
I/O reference voltage
MVREF
0.49
× GV
DD
0.51
× GV
DD
V2
I/O termination voltage
VTT
MVREF –0.04
MVREF +0.04
V
3
Input high voltage
VIH
MVREF + 0.125
GVDD +0.3
V
Input low voltage
VIL
–0.3
MVREF –0.125
V
Output leakage current
IOZ
–9.9
9.9
μA4
Output high current (VOUT = 1.420 V)
IOH
–13.4
mA
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