
Electrical Characteristics
MPC561/MPC563 Reference Manual, Rev. 1.2
F-12
Freescale Semiconductor
F.7
Flash Electrical Characteristics
The characteristics found in this section apply only to the MPC563.
Note: (VDDF = 2.6 V ± 0.1 V, VFLASH = 5.0 V ± 0.25 V, TA = TL to TH, TB = TL to TH)
Table F-6. Array Program and Erase Characteristics
Symbol
Meaning
Value
Units
Minimum
Typical1
1 Typical program and erase times assume nominal supply values and 25 °C.
Maximum
TERASE
Block Erase Time2
2 Erase time specification does not include pre-programming operation
312
s
TERASEM
Module Erase Time2
13
60
s
TPROG
Word Programming Time3,4
3 Word size is 32 bits.
4 The maximum hardware programming time of the entire Flash (not including the shadow row) is 20
s x (512 Kbytes
/ 4 bytes per word), or 131,072 words, (no software overhead).
15
20
s
Table F-7. CENSOR Cell Program and Erase Characteristics
Symbol
Meaning
Value
Units
Minimum
Typical1
1 Typical set and clear times assume nominal supply values and 25 °C.
Maximum
TCLEAR
CENSOR Bit Clear Time2
2 Clear time specification does not include pre-set operation.
13
60
s
TSET
CENSOR Bit Set Time
115
250
s
Table F-8. Flash Module Life
Symbol
Meaning
Value
Array P/E Cycles1
1 A Program/Erase cycle is defined as switching the bits from 1 to 0 to 1.
Maximum number of Program/Erase cycles per block to guarantee
data retention.
1,000
CENSOR Set/Clear
Cycles2
2 A CENSOR Set/Clear cycle is defined as switching the bits from 1 to 0 to 1.
Minimum number of Program/Erase cycles per bit before failure.
100
Array and CENSOR Data
Retention
Minimum data retention at an average of 85 °C junction temperature.
Minimum data retention at an average of 125 °C junction temperature.
Min 15 years3
Min 10 years3
3 Maximum total time @ 150 °C junction temperature
≤ 1 year.