參數(shù)資料
型號(hào)： MPC5602SEMLQR
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP144
封裝： 20 X 20 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, LQFP-144
文件頁(yè)數(shù)： 48/104頁(yè)
文件大?。?/td> 1729K
代理商： MPC5602SEMLQR
MPC560xS Microcontroller Data Sheet, Rev. 2
Preliminary—Subject to Change Without Notice
Electrical Characteristics
Freescale Semiconductor
48
3.6.4
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine
its performance in terms of electrical sensitivity.
3.6.4.1
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according
to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This
test conforms to the AEC-Q100-002/-003/-011 standard.
3.6.4.2
Static latch-up (LU)
Two complementary static tests are required on six parts to assess the latch-up performance:
A supply overvoltage is applied to each power supply pin.
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with the EIA/JESD 78 IC latch-up standard.
—
SR T VDD12, VDDPLL
operating voltages
TBD TBD TBD
V
—
SR T VDD, VDDA
operating voltages
TBD TBD TBD
V
—
SR T Maximum amplitude
TBD TBD TBD dBV
—
SR T Operating
temperature
TBD TBD TBD
°C
1 EMI testing and I/O port waveforms per SAE J1752/3 issued 1995-03.
Table 16. ESD absolute maximum ratings1 2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Symbol
C
Ratings
Conditions
Class
Max value
Unit
VESD(HBM) CC T Electrostatic discharge voltage
(Human Body Model)
TA = 25 °C
conforming to AEC-Q100-002
H1C
2000
V
VESD(CDM) CC T Electrostatic discharge voltage
(Charged Device Model)
TA = 25 °C
conforming to AEC-Q100-011
C3A
500
750 (corners)
Table 15. EMI Testing Specifications1 (continued)
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ Max
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