參數(shù)資料
型號(hào): MPC5200VR400BR2
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 10/72頁(yè)
文件大小: 0K
描述: IC MPU 32BIT 400MHZ 272-PBGA
標(biāo)準(zhǔn)包裝: 500
系列: MPC52xx
核心處理器: e300
芯體尺寸: 32-位
速度: 400MHz
連通性: CAN,EBI/EMI,以太網(wǎng),I²C,IrDA,J1850,SPI,UART/USART,USB
外圍設(shè)備: AC'97,DMA,I²S,POR,PWM,WDT
輸入/輸出數(shù): 56
程序存儲(chǔ)器類型: 外部程序存儲(chǔ)器
RAM 容量: 16K x 8
電壓 - 電源 (Vcc/Vdd): 1.42 V ~ 1.58 V
振蕩器型: 內(nèi)部
工作溫度: 0°C ~ 70°C
封裝/外殼: 272-BBGA
包裝: 帶卷 (TR)
MPC5200B Data Sheet, Rev. 4
18
Freescale Semiconductor
Figure 5. Timing Diagram—Standard SDRAM Memory Read Timing
1.3.6.2
Memory Interface Timing-Standard SDRAM Write Command
In Standard SDRAM, all signals are activated on the MEM_CLK from the Memory Controller and captured on the MEM_CLK
clock at the memory device.
Table 19. Standard SDRAM Write Timing
Sym
Description
Min
Max
Units
SpecID
tmem_clk
MEM_CLK period
7.5
ns
A5.8
tvalid
Control Signals, Address and MBA Valid
after rising edge of MEM_CLK
—tmem_clk × 0.5 + 0.4
ns
A5.9
thold
Control Signals, Address and MBA Hold after
rising edge of MEM_CLK
tmem_clk × 0.5
ns
A5.10
DMvalid
DQM valid after rising edge of MEM_CLK
tmem_clk × 0.25 + 0.4
ns
A5.11
DMhold
DQM hold after rising edge of Mem_clk
tmem_clk ×0.25– 0.7
ns
A5.12
datavalid
MDQ valid after rising edge of MEM_CLK
tmem_clk × 0.75 + 0.4
ns
A5.13
datahold
MDQ hold after rising edge of MEM_CLK
tmem_clk ×0.75– 0.7
ns
A5.14
MEM_CLK
Control Signals
MDQ (Data)
MA (Address)
NOTE: Control Signals are composed of RAS, CAS, MEM_WE, MEM_CS, MEM_CS1 and CLK_EN
Active
NOP
READ
NOP
thold
Row
Column
MBA (Bank Selects)
tvalid
thold
tvalid
thold
tvalid
DQM (Data Mask)
DMvalid
DMhold
NOP
datahold
datasetup
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