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參數(shù)資料
| 型號(hào)： | MPC2105PDG66 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
| 中文描述： | 64K X 64 CACHE TAG SRAM MODULE, 10 ns, DMA178 |
| 封裝： | DIMM-178 |
| 文件頁(yè)數(shù)： | 17/24頁(yè) |
| 文件大?。?/td> | 228K |
| 代理商： | MPC2105PDG66 |
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MPC2104
MPC2105
MPC2106
MPC2107
17
MOTOROLA FAST SRAM
TAG RAM AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
5%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
Input Timing Measurement Reference Level
Input Pulse Levels
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Rise/Fall Time
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 V
. . . . . . . . . . . . . . .
0 to 3.0 V
3 ns
Output Timing Measurement Reference Level
Output Load
. . . . . . . . . . . . . . . .
1.5 V
. . . . . . . . . . . . .
Figure 1A Unless Otherwise Noted
TAG RAM READ CYCLE
(See Notes 1 through 4)
Tag RAM
Parameter
Symbol
Min
Max
Unit
Notes
Clock Access Time
tKHQV
tGLQV
tGLQX
tGHQZ
tAXSX
tAVSV
tAVQX
tAVQV
—
10
ns
Output Enable to Output Valid
—
8
ns
Output Enable to Output Active
0
—
ns
Output Disable to Q High–Z
1
6
ns
Status Bit Hold from Address Change
3
—
ns
Address Access Time Status Bits
—
10
ns
Tag Bit Hold from Address Change
3
—
ns
Address Access Time Tag Bits
—
12
ns
NOTES:
1. Set–up and hold times, W (write) referes to TWE.
2. A read cycle is defined by TWE high. A write cycle is defined by TWE low.
3. Maximum access times are guaranteed for all possible MC68040 and PowerPC external bus cycles.
4. Tag reads are asynchronous.
TAG RAM WRITE CYCLE
(See Notes 1 through 4)
Tag RAM
Parameter
Symbol
Min
Max
Unit
Notes
Cycle Time
tKHKH
tKHKL
tKLKH
tKHQX
tAVKH
tWVKH
15
—
ns
Clock High Pulse Width
4.5
—
ns
Clock Low Pulse Width
4.5
—
ns
Clock High to Output Active
1.5
—
ns
Set–up Times
Address
Write
3
—
ns
Hold Times
Address
Write
tKHAX
tKHWX
1.5
—
ns
Status Output Hold
tKHSX
tKHSV
0
—
ns
Clock High to Status Bits Valid
—
9
ns
NOTES:
1. Set–up and hold times, W (write) referes to TWE.
2. A read cycle is defined by TWE high. A write cycle is defined by TWE low.
3. Maximum access times are guaranteed for all possible MC68040 and PowerPC external bus cycles.
4. Tag writes are synchronous.
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| MPC2104 | 256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
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| MPC2105ASG66 | 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPC2105SG66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
| MPC2106ASG66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
| MPC2106BSG66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
| MPC2106CDG66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
| MPC2106SG66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
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