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參數(shù)資料
| 型號： | MPC2105BSG66 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
| 中文描述： | 64K X 72 CACHE TAG SRAM MODULE, 10 ns, DMA178 |
| 封裝： | DIMM-178 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大小： | 228K |
| 代理商： | MPC2105BSG66 |
MPC2104
MPC2105
MPC2106
MPC2107
1
Motorola, Inc. 1995
Advance Information
256KB and 512KB BurstRAM
Secondary Cache Modules for
PowerPC
PReP/CHRP Platforms
The MPC2104/5/6/7 are designed to provide burstable, high performance L2
cache for the PowerPC 60x microprocessor family in conformance with the
PowerPC Reference Platform (PReP) and the PowerPC Common Hardware
Reference Platform (CHRP) specifications. These products utilize synchronous or
asynchronous data RAMs.
The MPC2104, MPC2105, and MPC2106 utilize synchronous BurstRAMs.
The modules are configured as 32K x 72, 64K x 72, and 128K x 72 bits in a 182
(91 x 2) pin DIMM format. The MPC2104 uses four of Motorola’s 5 V 32K x 18;
the MPC2105 uses four of the 5 V 64K x 18; the MPC2106 uses eight of the
5 V 64K x 18. For tag bits, a 5 V cache tag RAM configured as 16K x 12 for tag field
plus 16K x 2 for valid and dirty status bits is used.
Bursts can be initiated with the ADS signal. Subsequent burst addresses are
generated internal to the BurstRAM by the CNTEN signal.
Write cycles are internally self timed and are initiated by the rising edge of the
clock (CLKx) inputs. Eight write enables are provided for byte write control.
The MPC2107 utilizes asynchronous data RAMs. The module is configured as
32K x 64 in the same 182 pin DIMM format. Again, 5 V cache tag RAMs configured
as 16K x 12 for tag field plus 16K x 2 for valid and dirty status bits are used. Burst
capability is provided in that two burst addresses bypass the address latch.
Presence detect pins are available for auto configuration of the cache con-
trol. A serial EEPROM is optional to provide more in–depth description of the
cache module. This EEPROM will be available on future revisions of the module
family.
The module family pinout will support 5 V and 3.3 V components for a clear
path to lower voltage and power savings. Both power supplies must be connected.
All of these cache modules are plug and pin compatible with each other.
PowerPC–style Burst Counter on Chip (MPC2104/5/6)
Flow–Through Data I/O (MPC2104/5/6)
Plug and Pin Compatibility of entire Module Family
Multiple Clock Pins for Reduced Loading
All Cache Data and Tag I/Os are LVTTL (3.3 V) Compatible (MPC2104/5/6)
Three State Outputs
Byte Write Capability
Fast Module Clock Rates: Up to 66 MHz
Fast SRAM Access Times: 10 ns for Tag RAM Match
9 ns for Data RAM (MPC2104/5/6)
15 ns for Data RAM (MPC2107)
Decoupling Capacitors for Each Fast Static RAM
High Quality Multi–Layer FR4 PWB With Separate Power and Ground Planes
182 Pin Card Edge Module
Burndy Connector, Part Number: ELF182JSC–3Z50
BurstRAM is a trademark of Motorola.
PowerPC is a trademark of International Business Machines Corp.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MPC2104/D
SEMICONDUCTOR TECHNICAL DATA
MPC2104
MPC2105
MPC2106
MPC2107
11/8/95
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| MPC2105C | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
| MPC2105CDG66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
| MPC2105PDG66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
| MPC2105SG66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
| MPC2106ASG66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms |
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