參數(shù)資料
型號: MP4301
元件分類: 功率晶體管
英文描述: 3 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
封裝: FULLY MOLDED, 2-32C1B, SIP-12
文件頁數(shù): 1/6頁
文件大小: 162K
代理商: MP4301
MP4301
2004-07-01
1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistor in One)
MP4301
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Small package by full molding (SIP 12 pin)
High collector power dissipation (4 devices operation)
: PT = 4.4 W (Ta = 25°C)
High collector current: IC (DC) = 3 A (max)
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
6
V
DC
IC
3
Collector current
Pulse
ICP
6
A
Continuous base current
IB
0.5
A
Collector power dissipation
(1-device operation)
PC
2.2
W
Collector power dissipation
(4-device operation)
PT
4.4
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Array Configuration
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32C1B
Weight: 3.9 g (typ.)
1
R1 R2
7
R1 ≈ 4.5 k
R2 ≈ 300
6
12
8
5
2
3
10
49
11
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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MP4304 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)