參數(shù)資料
型號: MP4304
元件分類: 功率晶體管
英文描述: 3 A, 80 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, FULLY MOLDED, 2-32C1B, SIP-12
文件頁數(shù): 1/5頁
文件大小: 148K
代理商: MP4304
MP4304
2006-10-27
1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four High Gain Power Transistors inOne)
MP4304
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Small package by full molding (SIP 12 pin)
High collector power dissipation (4-device operation)
: PT = 4.4 W (Ta = 25°C)
High collector current: IC (DC) = 3 A (max)
High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
7
V
DC
IC
3
Collector current
Pulse
ICP
5
A
Continuous base current
IB
0.5
A
Collector power dissipation
(1-device operation)
PC
2.2
W
Collector power dissipation
(4-device operation)
PT
4.4
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32C1B
Weight: 3.9 g (typ.)
5
12
1
6
2
3
4
8
7
910
11
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