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參數(shù)資料
| 型號： | MP03XXX175 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Phase Control Dual SCR, SCR/Diode Modules |
| 中文描述： | 相位控制雙可控硅，SCR /二極管模塊 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 113K |
| 代理商： | MP03XXX175 |
MP03 XXX 175 Series
2/10
Symbol
Parameter
Conditions
Max.
Units
V
R
= 0
A
2
s
A
2
s
6800
5500
I
2
t for fusing
Surge (non-repetitive) on-state current
I
TSM
V
R
= 50% V
RRM
10ms half sine;
T
j
= 125
o
C
10ms half sine;
T
j
= 125
o
C
I
2
t
A
Symbol
Parameter
Conditions
Linear rate of rise of off-state voltage
200*
mA
V/
μ
s
On-state voltage
V
TM
I
RRM
/I
DRM
Peak reverse and off-state current
To 67% V
DRM
T
j
= 125
o
C
At V
RRM
/V
DRM
, T
j
= 125
o
C
At 500A, T
case
= 25
o
C - See Note 1
Rate of rise of on-state current
V
T(TO)
Threshold voltage
V
0.98
From 67% V
to 500A Repetitive 50Hz
Gate source 10V, 5
Rise time 0.5
μ
s, T
j
=125
o
C
m
0.75
At T
vj
= 125
o
C - See Note 1
At T
vj
= 125
o
C - See Note 1
r
T
On-state slope resistance
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
A
231000
V
R
= 0
V
R
= 50% V
RRM
150000
Units
Max.
1.3
V
30
100
A/
μ
s
Symbol
Parameter
Conditions
o
C/W
Units
o
C/W
o
C/W
Thermal resistance - case to heatsink
per Thyristor or Diode
R
th(j-c)
Virtual junction temperature
T
vj
o
C
o
C
T
sto
Storage temperature range
Mounting torque = 5Nm
with mounting compound
3 phase
halfwave
dc
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Max.
0.23
Thermal resistance - junction to case
per Thyristor or Diode
R
th(c-hs)
o
C/W
0.05
Isolation voltage
V
isol
2.5
0.21
0.22
125
-40 to 125
kV
dI/dt
dV/dt
SURGE RATINGS - PER ARM
THERMAL & MECHANICAL RATINGS
DYNAMIC CHARACTERISTICS - THYRISTOR
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