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參數(shù)資料
| 型號(hào)： | MN100352 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | Low Power 8-Bit Buffer with Cut-Off Drivers(低功耗8位帶截止驅(qū)動(dòng)器的緩沖器) |
| 中文描述： | 低功耗8位緩沖的截止點(diǎn)驅(qū)動(dòng)器（低功耗8位帶截止驅(qū)動(dòng)器的緩沖器） |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | MN100352 |
MN100352-X REV 1A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
AC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
VEE Range: -4.2V to -5.7V, LOADING: 25 Ohms to -2.0V, VCC=VCCA=GND
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
tpLH/tpHL(
1)
Propagation Delay
VEE=-4.2/-5.7V
2, 4 Dn to
Qn
0.5
2.4
ns
9
2, 4 Dn to
Qn
0.5
2.7
ns
10
2, 4 Dn to
Qn
0.3
2.6
ns
11
tpLH(2)
Propagation Delay
VEE=-4.2/-5.7V
2, 4 OEN to
Qn
1.4
4.2
ns
9
2, 4 OEN to
Qn
1.2
4.4
ns
10, 11
tpHL(2)
Propagation Delay
VEE=-4.2/-5.7V
2, 4 OEN to
Qn
0.7
2.8
ns
9
2, 4 OEN to
Qn
0.7
3.2
ns
10
2, 4 OEN to
Qn
0.7
3.0
ns
11
tTLH/tTHL
Transistion Time
VEE=-4.2/-5.7V
6
Qn
0.4
2.4
ns
9
6
Qn
0.4
2.7
ns
10
6
Qn
0.4
2.5
ns
11
Note 1:
Screen tested 100% on each device at -55 C, +25 C and +125 C temp., subgroups 1, 2,
3, 7 & 8.
Screen tested 100% on each device at +25 C temp only, subgroup A9.
Sample tested (Method 5005, Table 1) on each MFG. lot at +25 C, +125 C & -55 C temp.,
subgroups A1, 2, 3, 7 & 8.
Sample tested (Method 5005, Table 1) on each MFG. lot at +25 C, subgroup A9, and at
+125 C & -55 C temp., subgroups A10 & 11.
Sample tested (Method 5005, Table 1) on each MFG. lot at +25 C temp. only, subgroup
A9.
Not tested at +25 C, +125 C & -55 C temp. (DESIGN CHARACTERIZATION DATA).
Guaranteed by applying specified input condition and testing VOH/VOL.
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
5
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