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參數(shù)資料
| 型號： | MMUN2134LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 190K |
| 代理商： | MMUN2134LT1G |
MMUN2111LT1G Series
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
100
10
1
0.1
0.01
0.001
0
Vin, INPUT VOLTAGE (VOLTS)
I C
,COLLECT
OR
CURRENT
(mA)
TA =-25°C
25
°C
1
2
3
4
5
6
7
8
9
10
0.01
20
IC, COLLECTOR CURRENT (mA)
V
CE(sat)
,MAXIMUM
COLLECT
OR
VOL
TAGE
(VOL
TS)
0.1
1
0
40
60
80
1000
1
10
100
IC, COLLECTOR CURRENT (mA)
h
FE
,DC
CURRENT
GAIN
(NORMALIZED)
TA =75°C
-25
°C
100
10
75
°C
50
010
20
30
40
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,CAP
ACIT
ANCE
(pF)
0
TA =-25°C
25
°C
75
°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
IC/IB =10
VCE = 10 V
0
IC, COLLECTOR CURRENT (mA)
0.1
V
in
,INPUT
VOL
TAGE
(VOL
TS)
1
10
100
10
20
30
40
50
TA =-25°C
25
°C
75
°C
VO = 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(MILLIW
A
TTS)
RqJA = 625°C/W
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
25
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2134LT1G | 制造商:ON Semiconductor 功能描述:TRANSISTOR PRE-BIASED PNP 50V 22/47K |
| MMUN2134LT3 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
| MMUN2134RLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2135LT1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:Transistors Switching - Resistor Biased PNP DIGITAL TRANSISTOR |
| MMUN2136LT1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel |
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