參數(shù)資料
型號(hào): MMUN2134LT1G
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
文件頁數(shù): 10/13頁
文件大小: 190K
代理商: MMUN2134LT1G
MMUN2111LT1G Series
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
h
FE
,DC
CURRENT
GAIN
(NORMALIZED)
100
10
1
100
TA =75°C
25
°C
-25
°C
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0
10
20
30
TA = -25°C
75
°C
V
in
,INPUT
VOL
TAGE
(VOL
TS)
100
10
1
0.1
40
50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0
1
2
3
4
Vin, INPUT VOLTAGE (VOLTS)
75
°C
25
°C
TA = -25°C
I C
,COLLECT
OR
CURRENT
(mA)
5
6
7
8
9
10
Figure 11. Input Voltage versus Output Current
0.01
V
CE(sat)
,MAXIMUM
COLLECT
OR
VOL
TAGE
(VOL
TS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0
20
60
80
75
°C
25
°C
TA = -25°C
50
010
20
30
40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,CAP
ACIT
ANCE
(pF)
25
°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB =10
VCE = 10 V
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