參數(shù)資料
型號： MMUN2134LT1
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： PNP SILICON BIAS RESISTOR TRANSISTOR
中文描述： 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： CASE 318-08, TO-236, 3 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 133K
代理商： MMUN2134LT1
MMUN2111LT1 Series
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MMUN2111LT1
MMUN2111LT3
SOT–23
A6A
10
10
3000/Tape & Reel
10,000/Tape & Reel
MMUN2112LT1
MMUN2112LT3
SOT–23
A6B
22
22
3000/Tape & Reel
10,000/Tape & Reel
MMUN2113LT1
MMUN2113LT3
SOT–23
A6C
47
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2114LT1
MMUN2114LT3
SOT–23
A6D
10
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2115LT1 (Note 3.)
MMUN2115LT3
SOT–23
A6E
10
∞
3000/Tape & Reel
10,000/Tape & Reel
MMUN2116LT1 (Note 3.)
MMUN2116LT3
SOT–23
A6F
4.7
∞
3000/Tape & Reel
10,000/Tape & Reel
MMUN2130LT1 (Note 3.)
MMUN2130LT3
SOT–23
A6G
1.0
1.0
3000/Tape & Reel
10,000/Tape & Reel
MMUN2131LT1 (Note 3.)
MMUN2131LT3
SOT–23
A6H
2.2
2.2
3000/Tape & Reel
10,000/Tape & Reel
MMUN2132LT1 (Note 3.)
MMUN2132LT3
SOT–23
A6J
4.7
4.7
3000/Tape & Reel
10,000/Tape & Reel
MMUN2133LT1 (Note 3.)
MMUN2133LT3
SOT–23
A6K
4.7
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2134LT1 (Note 3.)
MMUN2134LT3
SOT–23
A6L
22
47
3000/Tape & Reel
10,000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
ICBO
ICEO
IEBO
–
–
100
nAdc
–
–
500
nAdc
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10
μ
A, IE = 0)
Collector-Emitter Breakdown Voltage (Note 4.)
(IC = 2.0 mA, IB = 0)
3. New devices. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
V(BR)CBO
V(BR)CEO
50
–
–
Vdc
50
–
–
Vdc
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMUN2134LT1G 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MMUN2134LT1G 制造商:ON Semiconductor 功能描述:TRANSISTOR PRE-BIASED PNP 50V 22/47K
MMUN2134LT3 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors
MMUN2134RLT1 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor
MMUN2135LT1G 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:Transistors Switching - Resistor Biased PNP DIGITAL TRANSISTOR
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