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參數(shù)資料
| 型號： | MMUN2134LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SILICON BIAS RESISTOR TRANSISTOR |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 133K |
| 代理商： | MMUN2134LT1 |
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
1
Publication Order Number:
MMUN2111LT1/D
MMUN2111LT1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
VCEO
IC
50
Vdc
Collector-Emitter Voltage
50
Vdc
Collector Current
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25
°
C
Derate above 25
°
C
PD
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
°
C/W
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
508 (Note 1.)
311 (Note 2.)
°
C/W
Thermal Resistance –
Junction-to-Lead
R
θ
JL
174 (Note 1.)
208 (Note 2.)
°
C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°
C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
SOT–23
CASE 318
STYLE 6
http://onsemi.com
A6x
x
Page 2)
M
= Device Marking
= A – L (See
= Date Code
A6x M
MARKING DIAGRAM
1
3
2
Preferred
devices are recommended choices for future use
and best overall value.
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2134LT1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2134LT1G | 制造商:ON Semiconductor 功能描述:TRANSISTOR PRE-BIASED PNP 50V 22/47K |
| MMUN2134LT3 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
| MMUN2134RLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2135LT1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:Transistors Switching - Resistor Biased PNP DIGITAL TRANSISTOR |
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