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參數(shù)資料
| 型號(hào)： | MMUN2113LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | MMUN2113LT3 |
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MMUN2111LT1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 5)
DC Current Gain
MMUN2111LT1, G
(VCE = 10 V, IC = 5.0 mA)
MMUN2112LT1, G
MMUN2113LT1, G
MMUN2114LT1, G
MMUN2115LT1, G
MMUN2116LT1, G
MMUN2130LT1, G
MMUN2131LT1, G
MMUN2132LT1, G
MMUN2133LT1, G
MMUN2134LT1, G
hFE
35
60
80
160
3.0
8.0
15
80
60
100
140
250
5.0
15
27
140
130
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
MMUN2111LT1, G
MMUN2112LT1, G
MMUN2113LT1, G
MMUN2114LT1, G
MMUN2133LT1, G
(IC = 10 mA, IB = 5 mA)
MMUN2130LT1, G
MMUN2131LT1, G
(IC = 10 mA, IB = 1 mA)
MMUN2115LT1, G
MMUN2116LT1, G
MMUN2132LT1, G
MMUN2134LT1, G
VCE(sat)
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MMUN2111LT1, G
MMUN2112LT1, G
MMUN2114LT1, G
MMUN2115LT1, G
MMUN2116LT1, G
MMUN2130LT1, G
MMUN2131LT1, G
MMUN2132LT1, G
MMUN2133LT1, G
MMUN2134LT1, G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
MMUN2113LT1, G
VOL
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
MMUN2111LT1, G
MMUN2112LT1, G
MMUN2113LT1, G
MMUN2114LT1, G
MMUN2133LT1, G
MMUN2134LT1, G
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MMUN2115LT1, G
MMUN2116LT1, G
MMUN2131LT1, G
MMUN2132LT1, G
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MMUN2130LT1, G
VOH
4.9
Vdc
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| MMUN2216LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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| MMUN2212LT3G | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2113LT3G | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 SS BR XSTR PNP 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2113RLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2114 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2114L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 10 k, R2 = 47 k |
| MMUN2114LT1 | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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