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參數(shù)資料
| 型號(hào)： | MMT05B230T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Thyristor Surge Protectors(晶闡管浪涌電壓保護(hù)器) |
| 中文描述： | 265 V, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | CASE 403C-01, SMT, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 52K |
| 代理商： | MMT05B230T3 |
Semiconductor Components Industries, LLC, 2004
March, 2004 Rev. 7
1
Publication Order Number:
MMT05B230T3/D
MMT05B230T3,
MMT05B260T3,
MMT05B310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakovertriggered crowbar
protectors. Turnoff occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
High Surge Current Capability: 50 Amps 10 x 1000
μ
sec, for
Controlled Temperature Environments
The MMT05B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in NonSemiconductor
Devices
FailSafe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Registered File #E210057
Device Marking: MMT05B230T3: RPBF; MMT05B260T3: RPBG;
MMT05B310T3: RPBJ, and Date Code
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
OffState Voltage Maximum
MMT05B230T3
MMT05B260T3
MMT05B310T3
V
DM
170
200
270
Volts
Maximum Pulse Surge Short Circuit
Current NonRepetitive
Double Exponential Decay Waveform
(Notes 1. and 2.)
(25
°
C Initial Temperature)
8 x 20
μ
sec
10 x 160
μ
sec
10 x 560
μ
sec
10 x 1000
μ
sec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
150
100
70
50
A(pk)
Maximum NonRepetitive Rate of
Change of OnState Current
Double Exponential Waveform,
R = 1.0, L = 1.5
μ
H, C = 1.67
μ
F,
I
pk
= 110A
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
di/dt
150
A/
μ
s
BIDIRECTIONAL TSPD
50 AMP SURGE
265 thru 365 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMT05B230T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MMT05B260T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MMT05B310T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MT1
MT2
SMB
(No Polarity)
(Essentially JEDEC DO214AA)
CASE 403C
(
)
RPBx
x
Y
WW
= Specific Device Code
= F, G or J
= Year
= Work Week
MARKING DIAGRAMS
YWW
RPBx
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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| MMT05B260T3 | Thyristor Surge Protectors(晶闡管浪涌電壓保護(hù)器) |
| MMT10B230T3 | Thyristor Surge Protectors |
| MMT10B260T3 | Thyristor Surge Protectors |
| MMT10B310T3 | Thyristor Surge Protectors |
| MMUN2134LT1 | PNP SILICON BIAS RESISTOR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMT05B230T3_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| MMT05B230T3G | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 50A Surge 265V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT05B260T3 | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 50A Surge 320V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT05B260T3G | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 50A Surge 320V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| MMT05B310T3 | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 50A Surge 365V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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